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Quantum Transistor

By Alexander M. ILYANOK

Technology name: Quantum-sized electronic devices and method for their operating. Low-noise transistors, microwave generators, heterodynes.

Patents: This is to inform you that basing on the patent application РСТ BY98/00012 (80 claims), which was previously proposed to you, we have filed the enhanced patent application РСТ BY99/00012 (102 claims). With regard to this very project we filed a variants of quantum-sized transistors and the method for their operating.

Development level: There was designed a theory that considers the form and sizes of an electron moving in a condensed substance. Applying the new theory it was possible for the first time to calculate parameters: of materials and their requirements in critical points absolutely precisely (without introducing correction coefficients). There were discovered temperatures for metal - semiconductor phase transitions and semiconductor . superconductor phase transitions. Additionally, there were determined the values of the critical current density and of the critical magnetic field for semiconductor . superconductor phase transitions. The conditions of resonant passing of electrons between electrodes and conditions for their association in groups were found. The theory treats in a new fashion the known experimental data obtained by different research groups. Thus, the concurrence of experimental data with theoretical calculations is within the interval of experimental errors.

It was determined that the size of a ring electron of 14.5 nm is the fundamental restriction for any components of integrated circuits operating at the temperatures increased up to 300T.С.

Moreover, the experiments have shown that under special conditions commercial transistors may develop the properties allowing to reduce their noise to the quantum level. Basing on new mechanisms of movement of electrons that underlie the said applications, it is possible to design transistors having no own noise. On this basis there was designed a transistor that may be used in supersensitive receivers for signals in a wide frequency range, in particular, for cellular telephones.

Additionally, the said transistors have low power demand since the power supply in such transistors does not exceed 0,3 V and the currents are determined by groups of electrons.

Technology description:

At present is possible to create sensitive receivers for super high-frequency (microwave) waveband up to the frequencies of 350 GHz. The input amplifiers and mixers in microwave receivers will be low noise resonant electronic transistors (RET) made according to our technology, the said transistors working unlike SET with one, two and more electrons. An active nanostructured film of clusters (similar to RET) that is built - in a strip microwave resonator will function as a microwave heterodyne generator.

We have found out that the problem with the known SETs was caused by the fact of imperfect allowance for capacities of leading electrodes. The problem was not solved in all patents. The method of solving the problem constitutes our Know-How. Moreover, we found out that it is possible to create special resonant conditions for the movement of an electron in RET. In this case the working temperatures may be increased by 137 times, what allows to create transistors working at temperatures up to 3000С and more. In this case the noise characteristics of devices will be connected with characteristic features of a input circuit and background interference. The method of optimization of the design constitutes our Know-How.

The technology of manufacturing RET devices may base on quantity production of clusters having a spherical or a cylindrical form. The sizes of layers in  multilayer clusters are strictly distributed for performing resonance of electrons in these clusters. It is supposed that clusters will be produced by depositing them from plasma on a substrate. Cylindrical clusters may manufacture by electrolytic methods. The basic technological problem will arise at sorting and selecting of clusters with required parameters.

Advantages of technology:

Use of the specified transistors in the telephone receivers of cellular communication may result at least in the following advantages:

  1. The range of the sure receiption is increased due to absence of noise of RET.

  2. The microwave irradiation of a user is lowered due to the essential reduction of the transmitter power of mobile telephones.

  3. Long time operation without overcharge

  4. The working temperature of devices is raised.

  5. Patentability.

Application fields:          microwave receivers, low-noise microwave amplifiers, low-noise microwave heterodynes, microwave strip generators.

Prototype: The possibility of resonant amplification in clusters was experimentally proved with the help of scanning tunnel microscope. There was obtained a good concurrence of theoretical calculations with the RET parameters.

Possible cooperation forms

Sale of an exclusive license for the respective claims of the patents based of the application РСТ BY99/00012. The exclusive rights are assigned for those claims of the application that refer to separate resonant RET devices and microwave strip generators. The Know-How for both manufacturing and for the design of amplifiers and generators may be additionally patented and optionally assigned by the future license agreement.

Cooperation and establishment of a joint venture in the Western country for further designing of quantum-sized electronic devices and superconducting materials is possible on basis of the application РСТ BY99/00012. Further there will be designed high quality microwave resonators for receivers and broadband communication lines (up to 350 GHz) as an alternative to optical fiber lines.

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